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| PD - 97114 IRGI4061DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * * * * * * * * * Low VCE (on) Trench IGBT Technology Low Switching Losses 5s SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 11A, TC = 100C tsc > 5s, Tjmax = 150C n-channel C VCE(on) typ. = 1.35V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses * Rugged Transient Performance for Increased Reliability * Excellent Current Sharing in Parallel Operation * Low EMI E C G TO-220AB Full-Pak G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25C IC@ TC = 100C ICM ILM IF@TC=25C IF@TC=100C IFM VGE PD @ TC =25C PD @ TC =100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. 600 20 11 40 40 20 11 40 20 30 43 17 -55 to + 150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e Weight Min. -- -- -- -- -- Typ. -- -- Max. 2.90 4.60 -- Units C/W g 0.5 -- 65 -- 2.0 1 www.irf.com 2/14/07 IRGI4061DPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES V(BR)CES/TJ Min. 600 -- -- -- -- 4.0 -- -- -- -- -- -- -- Typ. -- 0.75 1.35 1.53 1.58 -15 11 2.0 550 1.84 1.33 -- Max. -- -- 1.59 -- -- 6.5 -- -- 25 -- 2.05 -- 100 Units V V/C V V Conditions VGE = 0V,Ic =100 A Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VGE = 0V, Ic = 250 A ( -55 -150 oC ) IC = 11A, VGE = 15V, TJ = 25C IC = 11A, VGE = 15V, TJ = 125C IC = 11A, VGE = 15V, TJ = 150C VCE = VGE, IC = 500 A f f VCE(on) VGE(th) VGE(th)/TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current gfe ICES VFM IGES o mV/C VCE = VGE, IC = 1.0mA ( 25 -150 C ) VCE = 50V, IC = 11A, PW =80s S A A V nA VGE = 0V,VCE = 600V VGE = 0v, VCE = 600V, TJ =150C IF = 11A IF = 11A, TJ = 150C VGE = 20 V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 35 8.0 13 52 231 283 37 18 111 30 143 316 459 35 19 134 45 1050 89 30 Max. 53 12 23 95 340 435 46 26 129 41 -- -- -- -- -- -- -- -- -- -- Units IC = 11A nC VCC = 400V VGE = 15V Conditions IC = 11A, VCC = 400V, VGE = 15V J RG = 22, L=1mH, LS= 150nH, TJ = 25C Energy losses include tail and diode reverse recovery IC = 11A, VCC = 400V ns RG = 22, L=1mH, LS= 150nH TJ = 25C IC = 11A, VCC = 400V, VGE = 15V J RG = 22, L=1mH, LS= 150nH, TJ = 150C Energy losses include tail and diode reverse recovery IC = 11A, VCC = 400V ns RG = 22, L=1mH, LS= 150nH TJ = 150C VGE = 0V pF VCC = 30V f = 1Mhz TJ = 150C, IC = 40A VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V VCC = 400V, Vp =600V RG = 22, VGE = +15V to 0V TJ = 150oC VCC = 400V, IF = 11A VGE = 15V, Rg = 22, L=1mH, LS=150nH FULL SQUARE SCSOA Erec trr Irr Short Circuit Safe Operating Area Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current 5 -- -- -- -- 211 60 18 -- -- -- -- s J ns A Notes: VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. R is measured at TJ approximately 90C Refer to AN-1086 for guidelines for measuring V(BR)CES safely 2 www.irf.com IRGI4061DPBF 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 TC (C) 10 Ptot (W) 50 40 30 IC (A) 20 0 0 20 40 60 80 100 120 140 160 TC (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 10 s 100 s 10 100 Fig. 2 - Power Dissipation vs. Case Temperature 10 IC (A) 1 DC 0.1 IC A) 1 1ms 0.01 1 10 VCE (V) 100 1000 0 10 100 1000 VCE (V) Fig. 3 - Forward SOA, TC = 25C; TJ 150C 40 40 Fig. 4 - Reverse Bias SOA TJ = 150C; VCE = 15V VGE = 18V 30 VGE = 18V 20 30 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 20 10 10 0 0 2 4 VCE (V) 6 8 0 0 2 4 VCE (V) 6 8 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp <60s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp < 60s www.irf.com 3 IRGI4061DPBF 40 60 50 30 VGE = 18V 40 IF (A) -40C 25C 150C 20 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 30 20 10 10 0 0 2 4 VCE (V) 6 8 0 0.0 1.0 2.0 VF (V) 3.0 4.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp < 60s 14 12 10 VCE (V) Fig. 8 - Typ. Diode Forward Characteristics tp < 60s 14 12 10 VCE (V) 8 6 4 2 0 5 10 VGE (V) ICE = 5.5A ICE = 11A ICE = 22A 8 6 4 2 0 ICE = 5.5A ICE = 11A ICE = 22A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C 14 12 10 VCE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25C 40 30 ICE = 5.5A ICE = 11A ICE = 22A ICE (A) 8 6 4 2 0 5 10 VGE (V) 20 TJ = -40C TJ = 25C TJ = 150C 10 0 15 20 2 4 6 8 10 12 14 16 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp < 60s 4 www.irf.com IRGI4061DPBF 700 600 EOFF Swiching Time (ns) 1000 500 Energy (J) tdOFF 100 400 300 200 100 0 0 4 8 12 I C (A) 16 20 24 EON tF tdON 10 tR 1 0 4 8 12 16 20 24 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 1mH; VCE = 400V, RG = 22; VGE = 15V. 500 1000 Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1mH; VCE= 400V RG= 22; VGE= 15V EOFF 400 300 Swiching Time (ns) EON Energy (J) tdOFF 100 200 tdON tR tF 100 0 0 25 50 75 100 125 10 0 25 50 75 100 125 RG () Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L = 1mH; VCE = 400V, ICE = 11A; VGE = 15V 24 RG () Fig. 16- Typ. Switching Time vs. RG TJ = 150C; L=1mH; VCE= 400V ICE= 11A; VGE= 15V 24 20 RG =10 20 16 RG =22 IRR (A) 12 RG =47 RG = 100 IRR (A) 20 24 16 12 8 4 8 0 0 4 8 12 16 4 0 25 50 75 100 125 IF (A) RG () Fig. 17 - Typical Diode IRR vs. IF TJ = 150C Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 11A www.irf.com 5 IRGI4061DPBF 24 1100 1000 22 22A 10 20 900 QRR (nC) 47 100 11A 800 700 600 500 400 IRR (A) 16 5.5A 12 8 0 500 1000 300 0 600 diF /dt (A/s) 1200 Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 11A; TJ = 150C 400 diF /dt (A/s) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 150C 18 16 160 140 120 100 300 14 Energy (J) 200 10 22 47 Time (s) 12 10 8 6 80 60 40 8 10 12 14 VGE (V) 16 18 100 100 0 0 4 8 12 16 20 24 4 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150C 10000 Fig. 22- Typ. VGE vs Short Circuit Time VCC=400V, TC =25C 16 14 300V 400V 1000 Cies 12 VGE (V) Capacitance (pF) 10 8 6 4 2 100 Coes 10 Cres 1 0 100 200 300 400 500 0 0 10 20 30 40 VCE (V) Q G, Total Gate Charge (nC) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 11A, L=600H 6 www.irf.com Current (A) IRGI4061DPBF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4 0.1 0.01 Ci= i/Ri Ci i/Ri Ri (C/W) (sec) 0.203729 0.000093 0.311882 0.000764 1.09536 0.051077 1.289029 0.996 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.1 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4 0.01 Ci= i/Ri Ci i/Ri Ri (C/W) (sec) 0.265329 0.000056 1.150721 0.001322 1.326646 0.031959 1.857304 1.6697 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGI4061DPBF L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement 8 www.irf.com IRGI4061DPBF 600 500 400 90% ICE 30 tf 25 20 15 10 5 0 Eoff Loss 500 400 300 VCE (V) ICE (A) 50 40 tr 90% test current TEST 30 20 10 ICE (A) VCE (V) 300 200 100 0 200 100 0 5% VCE 10% ICE 10% test current 5% VCE 0 Eon Loss -0.05 0 time (s) 0.05 0.1 -10 -100 -0.15 0.05 0.25 -5 0.45 -100 -0.1 time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4 100 0 -100 -200 -300 VF (V) -400 -500 -600 -700 -800 -900 -0.10 0.00 0.10 Peak IRR 10% Peak IRR 20 15 QRR tRR 10 5 Vce (V) 500 400 300 250 VCE IC 200 150 100 50 0 -50 Ice (A) 0 -5 IF (A) 200 100 0 -100 -4 -2 0 2 4 6 8 10 Time (uS) WF.4- Typ. Short Circuit Waveform @ TJ = 25C using CT.3 -10 -15 -20 -25 -30 0.20 time (S) WF.3- Typ. Reverse Recovery Waveform @ TJ = 150C using CT.4 www.irf.com 9 IRGI4061DPBF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAMPLE: T HIS IS AN IRFI840G WIT H AS S EMBLY LOT CODE 3432 AS S EMBLED ON WW 24, 2001 IN T HE AS S EMBLY LINE "K" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFI840G 124K 34 32 Note: "P" in as sembly line pos ition indicates "Lead-Free" DATE CODE YEAR 1 = 2001 WEEK 24 LINE K TO-220 Full-Pak package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/07 10 www.irf.com |
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